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GDBD 4410
Transistor Drive
The driver unit provides the necessary
gate drive signals to fully control the
Symbol
Definitions
Max. Ratings
grounded-emitter low-side power devices
I O (rev)
peak reverse output current g1...g7
2
A
as well as the floating-emitter high-side
power devices including a negative-
going, off-state gate drive signal for
improved turn-off of IGBTs: Both the
IXBD4410 and IXBD4411 ICs contain on-
board negative charge pumps to provide
Symbol
Definitions/Conditions
Characteristic Values
(T VJ = 25°C, V DD = 15 V unless otherwise specified)
min. typ. max.
negative gate drive V EE , which ensures
VEE Supply (referred to M2467/M1/M3/M5)
turn-off of the high- or low-side power
device in the presence of currents induced
by power device Miller capacitance or
V EE
I out
output voltage; I C = 1mA; C S = 1μF
output current; V out = 0,7 ? V EE
-5
-20
-6.5
-25
-7.5
V
mA
from inductive ground transients. These
Output g1...g7 Characteristics
charge pumps provide -5 V relative to the
local driver ground when V DD is at +15 V,
and at average currents of 25mA.
V oh
V ol
R o
R o
I pk
HI Output/I o = -5 mA
LO Output/I o = 5 mA
Output HI Res./I o = -0.1 A
Output LO Res./I o = 0.1 A
Peak Output Current/C L = 10 nF
V DD -0.05
1.5
V EE +0.05
3
3
2
5
4
V
V
?
?
A
Switching times
t d(on)
t r
t d(off)
t f
4410 Turn-on delay time;
Rise time;
4410 Turn-off delay time
Fall time
C L = 1 nF
C L = 10 nF
C L = 1 nF
C L = 1 nF
C L = 10 nF
C L = 1 nF
110
70
15
70
70
15
175
100
20
150
150
20
ns
ns
ns
ns
ns
ns
t dlh(off)
4410 Turn-on delay time vs.
4411 Turn-off delay time
C L = 1 nF
60
150
ns
t dlh(on)
4410 Turn-on delay time vs.
4411 Turn-off delay time
C L = 1 nF
60
150
ns
Waveform reference
PBM 2/4/6/7
g 2/4/6/7
PBM 1/3/5
g 1/3/5
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